Novel photoresists containing at least about 0.2 molar ratio of a base with respect to the concentration of a photoacid generator present and their preparation are described. It has been discovered that inclusion of a sufficient amount of base counteracts the detrimental effects of photoacid generators, thus providing resists having submicron linewidth resolution.

 
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< Resist pattern thickening material, resist pattern and process for forming the same, and semiconductor device and process for manufacturing the same

< Photopolymer composition suitable for lithographic printing plates

> Positive-tone radiation-sensitive resin composition

> Lithographic printing plate precursor requiring no dampening water

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