Light emitting semiconductor device(s) of the present invention is/are provided with three LED elements by way of lead frame(s) on substrate(s) Reflector(s)—having parabolically curved surface(s) at inner wall(s) thereof is/are installed at periphery or peripheries of these LED elements. Radiative angle(s) of light radiating from such reflector(s) is/are controlled by alteration of height(s) of reflector(s). Such height(s) may be lowered to increase radiative angle(s) of light therefrom so as to establish broader irradiative locus or loci and/or such height(s) may be raised to decrease radiative angle(s) of light radiating therefrom so as to establish narrower irradiative locus or loci.