A method of measuring a concentration of dopants of an objective thin film includes
measuring a concentration of dopants of a first wafer, forming the objective thin
film on the first wafer to form a second wafer, measuring a concentration of dopants
of the second wafer, and obtaining the concentration of dopants of the objective
thin film by subtracting the concentration of dopants of the first wafer from the
concentration of dopants of the second wafer. Therefore, the concentration of dopants
of the objective thin film may be measured without the use of a criterion wafer,
thereby reducing measuring time. Also, the concentration of dopants of the objective
thin film may be easily controlled, and therefore promptly corrected if necessary.