A field effect transistor (FET) comprising an isolation layer, a source region
positioned over the isolation layer, a drain region positioned over the isolation
layer, a bifurcated silicide gate region positioned over the channel region, and
a gate oxide layer adjacent to the gate region, wherein the gate oxide layer comprises
an alkali metal ion implanted at a dosage calculated based on threshold voltage
test data provided by a post silicide electrical test conducted on said FET, wherein
the alkali metal ion comprises any of cesium and rubidium.