A substrate, a cathode electrode formed on the substrate, a gate insulating layer
which is formed on the cathode electrode and has a through hole corresponding to
part of the cathode electrode, a gate electrode which has a gate hole corresponding
to the through hole and is formed on the gate insulating layer, and an emitter
formed on the gate electrode exposed to the bottom of the through hole. The emitter
has a stack structure formed of a resistive material layer and an electron emission
material layer containing a fine electron emission source formed on the resistive
material layer.