A structure and method are provided for dissipating heat from a semiconductor device chip. A first layer of a dielectric material (e.g. polyimide) is formed on a front side of a heat spreader (typically Si). A plurality of openings are formed through this first layer; the openings are filled with metal (typically Cu), thereby forming metal studs extending through the first layer. A second layer of metal is formed on the backside of the device chip. The first layer and the second layer are then bonded in a bonding process, thereby forming a bonding layer where the metal studs contact the second layer. The bonding layer thus provides a thermal conducting path from the chip to the heat spreader.