A technique of using a metal element that has a catalytic action over crystallization of a semiconductor film to obtain a crystalline semiconductor film and then effectively removing the metal element remaining in the film is provided. A first semiconductor film (104) having a crystal structure is formed on a substrate. A barrier layer (105) and a second semiconductor film (106) containing a rare gas element are formed on the first semiconductor film (104). A metal element contained in the first semiconductor film (104) is moved to the second semiconductor film (106) through the barrier layer (105) by heat treatment for gettering.

 
Web www.patentalert.com

< Sorbents and methods for the removal of mercury from combustion gases

< Process and apparatus for treating semiconductor production exhaust gases

> Electric generator having a magnetohydrodynamic effect

> Amalgam-doped low mercury low-pressure UV irradiator

~ 00268