A semiconductor laser element comprising: a clad layer of a first
conductivity type; an active layer; a first clad layer of a second
conductivity type; a ridge made of a second clad layer of the second
conductivity type and a cap layer of the second conductivity type, which
are layered on the first clad layer of the second conductivity type, in
this order starting from the first clad layer side; a dielectric film
formed on ridge sides other than a top portion of the ridge; and a metal
electrode layer that covers the ridge, wherein the width of the bottom of
the cap layer and the width of the top surface of the second clad layer
are approximately equal.