A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X1/2).ltoreq.X2.ltoreq.(3*X1/4) and (X1/2).ltoreq.X3.ltoreq.(3*X1/4).