Apparatus and Methods for the self-alignment of separated regions in a
lateral MOSFET of an integrate circuit. In one embodiment, a method
comprising, forming a relatively thin dielectric layer on a surface of a
substrate. Forming a first region of relatively thick material having a
predetermined lateral length on the surface of the substrate adjacent the
relatively thin dielectric layer. Implanting dopants to form a top gate
using a first edge of the first region as a mask to define a first edge
of the top gate. Implanting dopants to form a drain contact using a
second edge of the first region as a mask to define a first edge of the
drain contact, wherein the distance between the top gate and drain
contact is defined by the lateral length of the first region.