A micro-casted silicon carbide nano-imprinting stamp and method of making
a micro-casted silicon carbide nano-imprinting stamp are disclosed. A
micro-casting technique is used to form a foundation layer and a
plurality of nano-sized features connected with the foundation layer. The
foundation layer and the nano-sized features are unitary whole that is
made entirely from a material comprising silicon carbide (SiC) which is
harder than silicon (Si) alone. As a result, the micro-casted silicon
carbide nano-imprinting stamp has a longer service lifetime because it
can endure several imprinting cycles without wearing out or breaking. The
longer service lifetime makes the micro-casted silicon carbide
nano-imprinting stamp economically feasible to manufacture as the
manufacturing cost can be recouped over the service lifetime.