The present invention relates to a measuring apparatus for measuring a thickness or the like of a thin film formed on a surface of a substrate such as a semiconductor wafer. The measuring apparatus includes a microwave emission device (40) for emitting a microwave to a substance, a microwave generator (45) for supplying the microwave to the microwave emission device (40), a detector (47) for detecting an amplitude or a phase of the microwave which has been reflected from or passed through the substance, and an analyzer (48) for analyzing a structure of the substance based on the amplitude or the phase of the microwave which has been detected by the detector (47).