A method of fabricating a surface emitting semiconductor laser includes a
first step of forming, on a substrate, multiple monitor-use semiconductor
layers having stripes radiating from a center of the substrate, and a
laser portion that includes semiconductor layers and is located on the
periphery of the multiple monitor-use semiconductor layers, a second step
of monitoring oxidized conditions on the multiple monitor-use
semiconductor layers when a selectively oxidized region is formed in the
laser portion, and a third step of controlling oxidization of the
selectively oxidized region on the basis of the oxidized conditions thus
monitored.