In one embodiment, the invention generally provides a method for annealing
a doped layer on a substrate including depositing a polycrystalline layer
to a gate oxide layer and implanting the polycrystalline layer with a
dopant to form a doped polycrystalline layer. The method further includes
exposing the doped polycrystalline layer to a rapid thermal anneal to
readily distribute the dopant throughout the polycrystalline layer.
Subsequently, the method includes exposing the doped polycrystalline
layer to a laser anneal to activate the dopant in an upper portion of the
polycrystalline layer.