The present invention facilitates data retention lifetimes for ferroelectric devices by improving switched polarization of ferroelectric memory cells. A ferroelectric memory device comprising ferroelectric memory cells is provided (702). A duration for applying a DC bias to the ferroelectric memory cells is selected (704) according to at least a desired switched polarization improvement. A magnitude for applying the DC bias to the ferroelectric memory cells is also selected (706) according to at least the desired switched polarization improvement. Further, an elevated temperature is selected for applying the DC bias to the ferroelectric memory cells is also selected (708) according to at least the desired switched polarization improvement. Subsequently, the DC bias is applied to the ferroelectric memory cells (710), which activates one or more inactive domains within the ferroelectric memory cells and increases initial polarization values.