Methods of forming lanthanum nickel oxide (LaNiO.sub.3) layers with precursor formation solutions are disclosed, along with devices made from such solutions. Also disclosed are methods for making the formation solutions using lanthanum, nickel, and a diol. The present invention enables the manufacture of LaNiO.sub.3 layers at low cost, with good resistivity properties, and a surface morphology suitable for interfacing to a ferro-electric material.