Integrated circuits, semiconductor devices and methods for making the same
are described. Each embodiment shows a diffused, doped backside layer in
a device wafer that is oxide bonded to a handle wafer. The diffused layer
may originate in the device handle, in the handle wafer, in the bond
oxide or in an additional semiconductor layer of polysilicon or epitaxial
silicon. The methods use a thermal bond oxide or a combination of a
thermal and deposited oxide.