In one embodiment, a method of forming a nanocluster charge storage device is provided. A first region of a semiconductor device is identified for locating one or more non-charge storage devices. A second region of the semiconductor device is identified for locating one or more charge storage devices. A gate oxide to be used as a gate insulator of the one or more non-charge storage devices is formed in the first region of the semiconductor device, and a nanocluster charge storage layer is subsequently formed in the second region of the semiconductor device. This may allow for improved integration of charge storage and non-charge storage devices. For example, since the nanoclusters are formed after formation of the gate oxide for the non-charge storage device, the nanoclusters are not exposed to an oxidizing ambient which could potentially reduce their size and increase the thickness of the underlying tunnel dielectric layer.