A method used to fabricate a semiconductor device comprises etching a
dielectric which results in an undesirable charge buildup along a
sidewall formed in the dielectric during the etch. The charge buildup
along a top and a bottom of the sidewall can reduce the etch rate thereby
resulting in excessive etch times and undesirable etch opening profiles.
To remove the charge, a sacrificial conductive layer is formed which
electrically shorts the upper and lower portions of the sidewall and
eliminates the charge. In another embodiment, a gas is used to remove the
charge. After removing the charge, the dielectric etch may continue.
Various embodiments of the inventive process and in-process structures
are described.