A method of forming (and apparatus for forming) a zirconium and/or hafnium-containing layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more silicon precursor compounds of the formula Si(OR).sub.4 with one or more zirconium and/or hafnium precursor compounds of the formula M(NR'R'').sub.4, wherein R, R', and R'' are each independently an organic group and M is zirconium or hafnium.

 
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