After forming an opening, a resist film is formed on the entire surface and a resist pattern is formed by patterning the resist film. The shape of the resist pattern is such that it covers one side of the bottom of the opening. As a result, a Si substrate is exposed only in one part of the opening. Then, using the resist pattern as a mask, a catalytic layer is formed on the bottom of the opening. Then, the resist pattern is removed. Carbon nanotubes are grown on the catalytic layer. At this time, since the catalytic layer is formed on only one side of the bottom of the opening, the Van der Waals force biased towards that side works horizontally on the growing carbon nanotubes. Therefore, the carbon nanotubes are attracted towards the nearest side of the SiO.sub.2 film and grow biased towards that side.