The present invention provides a chemical-mechanical polishing slurry for
use in removing a barrier layer during the fabrication of a damascene
structure. The slurry according to the invention includes an agent that
suppresses the rate at which an underlying silicon-containing dielectric
layer is removed. In the presently most preferred embodiment of the
invention, the agent that suppresses the rate at which an underlying
silicon-containing dielectric layer is removed is L-lysine and/or
L-arginine. The present invention also provides a method of suppressing
the removal rate of an underlying silicon-containing dielectric layer
during the chemical-mechanical polishing of a barrier layer in a
damascene structure. The method according to the invention includes
polishing the barrier layer with a slurry comprising an agent that
suppresses the rate at which said underlying silicon-containing
dielectric layer is removed.