Capacitors for use in an integrated circuit are provided. One aspect of this disclosure relates to a method of making a capacitor. According to various embodiments of the method a bottom electrode adapted to act as an etch stop is formed, a substantially cone-shaped first plate of conductive material is formed having an interior and exterior surface and terminating at the bottom electrode, a layer of dielectric material is formed on at least a portion of the interior and exterior surface of the first plate and substantially conforming to the shape of the first plate, and a second plate of conductive material is formed over the layer of dielectric material. Other aspects and embodiments are provided herein.