The present application pertains to unconventional sputter target/backing plate assemblies (10) for high power operation and to the low temperature method of making them. The sputter target/backing plate assemblies (10) comprise targets (12) and backing plates (16) having dissimilar thermal coefficients of expansion. Although the consolidated targets (12) and backing plates (16) have dissimilar thermal coefficients of expansion, they are able to be bonded together and used at high sputtering temperatures without bowing or bending and are able to utilize backing plates (16) normally associated with a specified target metal. In the method of making, a plurality of male projections (16) are formed in one member of the assembly (10) with a plurality of corresponding female grooves (32) formed in the other surface. The assembly (10) is bonded by conventional techniques around an annular zone that surrounds the male (26) and female portions (32). The assembly (10) is then pressure consolidated at low temperature so that the projections are force fit into the female recesses.

 
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