A semiconductor device comprising a first insulating layer formed above a
semiconductor substrate, and comprising a first insulating material, a
second insulating material and a hole, a relative dielectric constant of
the first insulating material being 3 or less, a Young's modulus of the
first insulating material being 10 GPa or less, a linear expansivity of
the first insulating material being greater than
30.times.10.sup.-6.degree. C..sup.-1, and a linear expansivity of the
second insulating material being 30.times.10.sup.-6.degree. C..sup.-1 or
less, and a second insulating layer formed on the first insulating layer,
the second insulating layer having a groove connected to the hole,
wherein a linear expansivity .alpha. of the first insulating layer within
6 .mu.m from the hole is 30.times.10.sup.-6.degree. C..sup.-1 or less,
where.alpha..times..times..alpha. ##EQU00001## v.sub.i and .alpha..sub.i
are a volume ratio and a linear expansivity of an i-th insulating
material.
