A compound that includes at least Si, N and C in any combination, such as
compounds of formula (R--NH).sub.4-nSiX.sub.n wherein R is an alkyl group
(which may be the same or different), n is 1, 2 or 3, and X is H or
halogen (such as, e.g., bis-tertiary butyl amino silane (BTBAS)), may be
mixed with silane or a silane derivative to produce a film. A polysilicon
silicon film may be grown by mixing silane (SiH.sub.4) or a silane
derviative and a compound including Si, N and C, such as BTBAS. Films
controllably doped with carbon and/or nitrogen (such as layered films)
may be grown by varying the reagents and conditions.