Enhanced passgate structures for use in low-voltage systems are presented in which the influence of V.sub.t on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the V.sub.GATE-V.sub.t limit for signals propagated through NMOS passgates is raised by applying a higher V.sub.GATE; in another arrangement, the V.sub.t is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.