Disclosed is a semiconductor device having a driver circuit operable at high speed and a method for manufacturing same. An active matrix liquid crystal display device uses a polysilicon film for its TFT active layer constituting a pixel matrix circuit because of low off current characteristics. On the other hand, a TFT active layer constituting driver circuits and a signal processing circuit uses a poly silicon germanium film because of high speed operation characteristics.

 
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< Cold cathode field emission device and process for the production thereof, and cold cathode field emission display and process for the production thereof

< Radiation emitter device having an integral micro-groove lens

> Method for manufacturing display device that includes supplying solution to the underside of a glass substrate

> Method for measuring 3-dimensional orientation of a photoactive moiety

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