The present invention relates to a method for cladding a simple or complex surface, electrically conducting or semiconducting, by means of an organic film from at least one precursor of said organic film, characterized in that the cladding of the surface by the organic film is carried out by electro-initiated grafting of said, at least one, precursor of said surface by applying at least one potential sweep on this surface carried out in such a way that at any point of said surface the maximum potential of each potential sweep, in absolute value and relative to a reference electrode, is greater than or equal to the value of the potential (v.sub.bloc) from which the curves of a graph expressing the quantity of electro-grafted precursor on a surface identical to said surface in function of the number of potential sweeps are all superposed and independent of this v.sub.bloc potential.

 
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