The present invention relates to a method for cladding a simple or complex
surface, electrically conducting or semiconducting, by means of an
organic film from at least one precursor of said organic film,
characterized in that the cladding of the surface by the organic film is
carried out by electro-initiated grafting of said, at least one,
precursor of said surface by applying at least one potential sweep on
this surface carried out in such a way that at any point of said surface
the maximum potential of each potential sweep, in absolute value and
relative to a reference electrode, is greater than or equal to the value
of the potential (v.sub.bloc) from which the curves of a graph expressing
the quantity of electro-grafted precursor on a surface identical to said
surface in function of the number of potential sweeps are all superposed
and independent of this v.sub.bloc potential.