The storage layer (6) is in each case present above a region in which the
channel region (3) adjoins a source/drain region (2) and is in each case
interrupted above an intervening middle part of the channel region (3).
The storage layer (6) is formed by material of the gate dielectric (4)
and contains silicon or germanium nanocrystals or nanodots introduced
through ion implantation. The gate electrode (5) is widened at the flanks
by electrically conductive spacers (7).