The present invention relates to a semiconductor device including a high
withstand voltage MOS transistor and a manufacturing method thereof. The
semiconductor device according to the present invention includes a MOS
transistor in which a second-conductivity type source region is formed on
a first-conductivity type semiconductor region, an offset drain region is
interconnected to a second-conductivity type drain region and has a
concentration lower than an impurity concentration of a drain region, the
offset drain region is composed of a portion that does not overlap a
first-conductivity type semiconductor region and a portion that overlaps
part of the surface of the first-conductivity type semiconductor region
and a gate electrode is formed on the surface extending from a channel
region between the source region and the offset drain region to part of
the offset drain region through a gate insulating film.Thus, there can be
obtained an offset drain type MOS transistor having a stable threshold
voltage Vth and a low ON-state resistance.