On a silicon layer of an SOI wafer is defined a semiconductor
device-forming region to form semiconductor devices thereon and an
insulating region to electrically insulate the semiconductor
device-forming region. Then, a mask layer is formed of nitride by means
of photolithography so as to cover the semiconductor device-forming
region. Then, an impurities-removing layer is formed by means of well
known technique so as to cover the mask layer and embed the gaps between
the adjacent masks of the mask layer. The impurities of the silicon layer
of the SOI wafer are absorbed and removed by the distorted layer, the
grain boundaries and the lattice defects of the impurities-removing
layer.