A capacitor 11 made up of a lower electrode 8, a capacitive insulating film 9 of an insulating metal oxide and an upper electrode 10 is formed over a semiconductor substrate 1. A first-layer wire 14 is formed on a passivation film 12 that covers the capacitor 11. A first interlevel dielectric film 15 is deposited to cover the first-layer wire 14. A second interlevel dielectric film 17 is deposited over the first interlevel dielectric film 15 with a barrier film 16, which overlaps the capacitor 11 for preventing hydrogen from diffusing, interposed therebetween. A second-layer wire 19 is formed on the second interlevel dielectric film 17. The first interlevel dielectric film 15 has a hydrogen content lower than that of the second interlevel dielectric film 17.