A method for making an integrated circuit. An area of dielectric material is formed on a substrate by hydrolyzing a plurality of precursors to form a hybrid organic inorganic material. One of the precursors is a compound R.sub.1R.sub.2R.sub.3SiR.sub.4, wherein R.sub.1, R.sub.2, R.sub.3 are each independently aryl, a cross linkable group, or alkyl of 1-14 carbons, and wherein R.sub.4 is alkoxy, acyloxy, --OH or halogen. Also disclosed is a method for forming a hybrid organic inorganic layer on a substrate by hydrolyzing a tetraalkoxysilane, trialkoxysilane, trichlorosilane, dialkoxysilane, or dichlorosilane, with R.sup.1R.sup.2R.sup.4MR.sup.5, wherein R.sup.1, R.sup.2 and R.sup.4 are independently aryl, alkyl, alkenyl, epoxy or alkynyl, at least one of R.sup.1, R.sup.2 and R.sup.4 is fully or partially fluorinated, M is selected from group 14 of the periodic table, and R.sup.5 is either alkoxy, OR.sup.3 wherein R.sup.3 is alkyl of 1 to 10 carbons, or halogen.