The present invention aims to provide a semiconductor laser device which has a structure that is easy to manufacture, a satisfactory temperature characteristic as well as high-speed response characteristic. The device includes the following: an n-type GaAs substrate 101; an n-type AlGaInP cladding layer 102 formed on the n-type GaAs substrate 101; a non-doped quantum well active layer 103; a p-type AlGaInP first cladding layer 104; a p-type GaInP etching stop layer 105; a p-type AlGaInP second cladding layer 106; a p-type GaInP cap layer 107; a p-type GaAs contact layer 108; and an n-type AlInP block layer 109. The device has a ridge portion and convex portions formed on both sides of the ridge portion, and the p-type GaAs contact layer 108 is formed on the ridge portion only.