Ge/Si and other nonsilicon film heterostructures are formed by
hydrogen-induced exfoliation of the Ge film which is wafer bonded to a
cheaper substrate, such as Si. A thin, single-crystal layer of Ge is
transferred to Si substrate. The bond at the interface of the Ge/Si
heterostructures is covalent to ensure good thermal contact, mechanical
strength, and to enable the formation of an ohmic contact between the Si
substrate and Ge layers. To accomplish this type of bond, hydrophobic
wafer bonding is used, because as the invention demonstrates the
hydrogen-surface-terminating species that facilitate van der Waals
bonding evolves at temperatures above 600.degree. C. into covalent
bonding in hydrophobically bound Ge/Si layer transferred systems.