A field effect transistor includes a channel region under a gate stack
formed on a semiconductor structure. The field effect transistor also
includes a drain region formed with a first dopant doping a first side of
the channel region, and includes a source region formed with the first
dopant doping a second side of the channel region. The drain and source
regions are doped asymmetrically such that a first charge carrier profile
between the channel and drain regions has a steeper slope than a second
charge carrier profile between the channel and source regions.