A semiconductor method of manufacturing involving porous and/or carbon containing, low-k dielectrics is provided. The method includes forming a hydrocarbon of the general composition C.sub.xH.sub.y on the surface of the low-k dielectric. The hydrocarbon layer includes depositing a precursor material, preferably C.sub.2H.sub.4 or (CH.sub.3).sub.2CHC.sub.6H.sub.6CH.sub.3. In accordance with embodiments of this invention, carbon diffuses into the low-k dielectric, thereby reducing carbon depletion damage caused by plasma processing or etching. Surface dielectric pores damaged by plasma processing are also repaired by sealing them with the C.sub.xH.sub.y layer. Embodiments include semiconductor devices, such as devices having damascene interconnect structures, manufacturing using methods provided.