A double gate germanium metal-oxide semiconductor field-effect transistor
(MOSFET) includes a germanium fin, a first gate formed adjacent a first
side of the germanium fin, and a second gate formed adjacent a second
side of the germanium fin opposite the first side. A triple gate MOSFET
includes a germanium fin, a first gate formed adjacent a first side of
the germanium fin, a second gate formed adjacent a second side of the
germanium fin opposite the first side, and a top gate formed on top of
the germanium fin. An all-around gate MOSFET includes a germanium fin, a
first sidewall gate structure formed adjacent a first side of the
germanium fin, a second sidewall gate structure formed adjacent a second
side of the germanium fin, and additional gate structures formed on and
around the germanium fin.