To realize a field emission type image display device which can obtain a high current density at low voltage driving, assuming a diagonal screen size of the display region as D(mm), the number of the pixels which are arranged in the x direction as Nh, the number of the pixels which are arranged in the y direction as Nv, the distance between the electron passing apertures formed in the strip-like electrode elements which constitute the control electrodes as db(mm), the distance between the electron source and the strip-like electrode element as Lkg(mm), and an aperture diameter of the electron passing apertures as .phi.G(mm),provided that the aperture diameter .phi.G(mm) is expressed by the following formula (45),.times.>.function..function. ##EQU00001## the following formula (46) is established. (0.46ln(db)+2.5)Lkg+0.006ln(db)+0.04.ltoreq..phi.G.ltoreq.(-0.41ln(db)-0.- 68)Lkg+0.014ln(db)+0.145 (46)