A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
Web www.patentalert.com
> Gallium nitride compound semiconductor device
HOME | NEW USER | LOGIN | SUBSCRIPTIONS | SEARCH | GUESTBOOK | CONTACT