Methods of forming a microelectronic device can include providing a gate
dielectric layer on a channel region of a semiconductor substrate wherein
the gate dielectric layer is a high-k dielectric material. A gate
electrode barrier layer can be provided on the gate dielectric layer
opposite the channel region of the semiconductor substrate, and a gate
electrode metal layer can be provided on the gate electrode barrier layer
opposite the channel region of the semiconductor substrate. The gate
electrode barrier layer and the gate electrode metal layer can be formed
of different materials. Moreover, the gate electrode metal layer can
include a first material and the gate electrode barrier layer can include
a second material, and the first material can have a lower electrical
resistivity than the second material.