The present invention provides a semiconductor device, a method of
manufacture therefor, and a method for manufacturing an integrated
circuit. The semiconductor device (100), among other possible elements,
includes a silicided gate electrode (150) located over a substrate (110),
the silicided gate electrode (150) having gate sidewall spacers (160)
located on sidewalls thereof. The semiconductor device (100) further
includes source/drain regions (170) located in the substrate (110)
proximate the silicided gate electrode (150), and silicided source/drain
regions (180) located in the source/drain regions (170) and at least
partially under the gate sidewall spacers (160).