A method is disclosed for fabricating a integrated device, such as a MEMS
device. A first wafer is provided on an exposed surface with a layer of
gold, gold alloy or gold compound. A second wafer is provided on its
exposed surface with under-layer of gold, gold alloy or gold compound;
and an over- of bismuth, bismuth alloy, a compound of bismuth, cadmium,
cadmium alloy, a compound of cadmium compound, tin, tin alloy, or a
compound of tin. The wafers are then brought into contact and bonded at
their surfaces through the deposited layers.