A green LED has a substrate, a GaN heavily n-doped bottom confining layer,
an active region, an upper GaN confinement layer, and a semi-transparent
ohmic contact layer. The active region has less than or equal to three
highly compressively strained quantum wells. The widths of the quantum
wells is less than 3 nm. The active region arrangement provides a short
free carrier life-time and hence an increase in the modulation bandwidth
of the LED.