A magnetic tunnel junction (MTJ) sensor system and a method for fabricating the same. A sensor includes a pinned layer, a free layer, and a tunnel barrier layer positioned between the pinned layer and the free layer. The pinned layer, the free layer, and the tunnel barrier layer define a track width. The pinned layer, the free layer, and the tunnel barrier layer are positioned between first and second lead layers. A pair of hard bias layers generate a hard bias magnetic field. Insulating layers are positioned between the hard bias layers and the first and second lead layers. In use, a sensor magnetic field generated by the current is opposite and substantially equal to the hard bias magnetic field at a center of the track width of the sensor.