The present invention provides a Shield-Junction thin film transistor structure. According to the structure of the present invention, on top of the passivation layer, there is an island of protection electrode electrically insulated from the bottom ITO electrode. The protection electrode electrically connects with the gate line through a via hole and covers part of the drain electrode and its adjacent part of the TFT channel. Since the protection electrode does not cover or overlap with the source electrode, it has a negligible contribution to the data-line capacitance.