A solid state image pickup device is provided which can reduce crosstalks
between range finding photoelectric conversion elements (AF sensor) and
photometry photoelectric conversion elements (AE sensor). The solid state
image pickup device has an n-type epitaxial semiconductor region, a
p-type first well region formed in the semiconductor region, a p-type
second well region formed in the semiconductor region and electrically
separated from the first well, an n-type first impurity doped region
formed in the first well region and an n-type second impurity doped
region formed in the second well, wherein a photometry photoelectric
conversion element is formed by using the p-type first well region and
n-type first impurity doped region, and a range finding photoelectric
element is formed by using the p-type second well region and n-type
impurity doped region.