A lithographic apparatus is disclosed. The lithographic apparatus includes a radiation source that produces EUV radiation, an illumination system that provides a beam of the EUV radiation produced by the radiation source, and a support structure that supports a patterning structure. The patterning structure is configured to impart the beam of radiation with a pattern in its cross-section. The apparatus also includes a substrate support that supports a substrate, and a projection system that projects the patterned beam onto a target portion of the substrate. The radiation source includes a debris-mitigation system that mitigates debris particles which are formed during production of EUV radiation. The debris-mitigation system is configured to provide additional particles for interacting with the debris particles.