A random access memory includes a logic circuit coupled to a power supply of a column having a memory cell. The logic circuit adjusts the supply voltage for the memory cell in the column in accordance with a control signal. A control circuit is coupled to the logic circuit, which generates the control signal in accordance with an operation type and whether the column is selected, such that the logic circuit selects the supply voltage in accordance with the control signal. The cell may include high mobility devices to improve performance.